III-V Growth
III-V Growth Brief description Our Growth Facility houses two III-V MBE growth systems (‘W’ and ‘V’ Chambers) with identical configurations and in-situ monitoring capabilities capable of a growth temperature range between 0°C to 1000°C and group III materials/dopants. Many of the device structures grown by the group (over 10,000 to date) have been replicated in […]
Topological Materials Growth
Topological Materials Growth Brief description The Topological Materials dual chamber MBE has been designed for epitaxial growth of thin films of emerging classes of materials; topological (Bi-Sb-Te family); Weyl semi-metals (MoTe2); ferromagnetic; and antiferromagnetic (Mn alloys). Jump to booking Topological Materials Growth Brief description The Topological Materials dual chamber MBE has been designed for epitaxial […]
Growth
Growth The Nanofabrication Growth Facility features three Molecular Beam Epitaxial (MBE) Growth systems, operated in a cleanroom environment, covering a wide range of material systems. Key features: Growth of a wide range of material systems, which are subdivided into two main groupings: III-V (Arsenides) & Topological Materials. Dedicated characterisation and measurement systems including Normaski optical […]
