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We have a small suite of dry etch tools for both reactive ion etching (RIE) and inductively coupled plasma (ICP) etching. These tools have a range of process gases, with dedicated tools for Chlorine-based etching of III-V semiconductors and Fluorine-based etching of dielectrics.
Item | Compatibility |
|---|---|
ICP etching for compound semiconductor materials; Chlorine-based chemistry in a load-locked ICP chamber | Uniform etching over 4" substrates |
Metal-free process; Tabletop RIE tool for silica, silicon nitride, polymer etching | Chips upto 3" wafers |
Fluorine-based chemistry; RIE for general etching - mixed chemistry | Optimised for small chip work |
ICP for metal contaminated processes - mixed chemistry | Optimised for small chip work |
ICP etching - For silicon, silica, silicon nitride including deep silicon of etching (Bosch or cryo process) | Chips upto 4" wafers |
Whether you are new to the National Facility or have visited us before, our Getting Access page contains more information about booking our services.
Turnaround time is generally from one week, although this could be faster or slower depending on the work package; please contact us for more details.
For pricing details and more information about the services we can provide please contact us.
We’re happy to help; please contact us using the form above. Or try our searchable equipment directory for an overview of everything CORDE has to offer.
