III-V Growth​

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Brief description

Our Growth Facility houses two III-V MBE growth systems (‘W’ and ‘V’ Chambers) with identical configurations and in-situ monitoring capabilities capable of a growth temperature range between 0°C to 1000°C and group III materials/dopants. Many of the device structures grown by the group (over 10,000 to date) have been replicated in both MBE chambers. Substrate temperature monitoring is undertaken by both optical pyrometer (0.97mm) and kSA BandiT band edge thermometry. In-situ monitoring of film growth includes RHEED, pyrometric interferometry and spectral reflectometry.

 

III-V Growth

Brief description

Our Growth Facility houses two III-V MBE growth systems (‘W’ and ‘V’ Chambers) with identical configurations and in-situ monitoring capabilities capable of a growth temperature range between 0°C to 1000°C and group III materials/dopants. Many of the device structures grown by the group (over 10,000 to date) have been replicated in both MBE chambers. Substrate temperature monitoring is undertaken by both optical pyrometer (0.97mm) and kSA BandiT band edge thermometry. In-situ monitoring of film growth includes RHEED, pyrometric interferometry and spectral reflectometry.

Applications and Uses

The applications and uses of our two III-V (Arsenides) MBE systems are below:
 

W Chamber: Veeco GEN III MBE with connected hydrogen cleaning (620) chamber

  • Twelve source cells on the chamber
  • All the matrix growth elements are duplicated to allow extended growth campaign lengths (>2 years).
  • Historically focused on producing ultra-high mobility 2DEG & 2DHG structures, InAs dot growth and re-growth projects, which utilise the UHV connected Hydrogen cleaning (620) chamber
  • Device portfolio includes RTD, VECSEL and LT-GaAs material.

V Chamber: Veeco modGEN II MBE

  • Nine source cells on the V Chamber
  • Only the Aluminium and Gallium matrix growth elements are duplicated, which allow growth campaign lengths of 1-2 years
  • Historically focused on producing high mobility 2DEG & 2DHG structures and material for THz programmes, including THz quantum cascade lasers. Its device portfolio includes RTD, VECSEL and InAs dot material.

Components and further details

The details of the W and V Chambers are below. The W Chamber has a UHV connected Hydrogen cleaning (620) chamber with an atomic Hydrogen source and SIMS analysis capabilitiesu

Specification

W Chamber & Veeco 620

V Chamber

Source Cells on Chamber

12

9

Group III

Al (x2), In (x3), Ga (x2) Atomic Hydrogen source

Al (x2), In (x1), Ga (x2)

Group IV

As (x2) - valved cracker cells SIMS analysis

As (x1) - valved cracker cell

Dopant

Si & Si strip (n-type), C (p-type)

Si (n-type), C & Be (p-type)

 
Compatibility
Contact us for further information.
 
Usage restrictions
Not applicable
 

Operating Status

Fully operational

Booking

Whether you are new to the National Facility or have visited us before, our Getting Access page contains more information about booking our services. 

Availability and lead times

Turn around time is generally from one week, although this could be faster or slower depending on the work package; please contact us for more details.

Pricing

For pricing details and more information about the services we can provide please contact us.

Enquire about this instrument

If you are new to CORDE we would recommend contacting us via the form below to ensure we can help you with a detailed response. Or you can contact the team directly at growth@phy.cam.uk.

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