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The Topological Materials dual chamber MBE has been designed for epitaxial growth of thin films of emerging classes of materials; topological (Bi-Sb-Te family); Weyl semi-metals (MoTe2); ferromagnetic; and antiferromagnetic (Mn alloys).
The Topological Materials dual chamber MBE has been designed for epitaxial growth of thin films of emerging classes of materials; topological (Bi-Sb-Te family); Weyl semi-metals (MoTe2); ferromagnetic; and antiferromagnetic (Mn alloys).
The main UHV chamber (TI-MBE) or ‘R Chamber’ is connected to a secondary chamber (UHV-MBE) or ‘S Chamber’ that allows thermal and electron beam deposition of a range of metals that can deposit superconducting layers. This twin system allows a wide range of alloys with precise stoichiometry to be combined into heterostructures for potential new device applications.
Currently mounted on the PREVAC TI-MBE chamber are five thermal effusion cells, one electron beam cell and two valved-cracker cells, with two unpopulated source ports for future upgrade capability. The manipulator is capable of growth temperature range between -100°C to 1200°C. Substrate temperature monitoring is undertaken by kSA BandiT band edge thermometry, with in-situ monitoring of film growth by RHEED.
The UHV-MBE chamber has a similar chamber design, comprising the same manipulator (-100°C to 1200°C). Currently it has a four-pocket electron beam source installed, giving future upgrading capability with the ten unpopulated source ports. Unfortunately, source materials cannot be changed regularly, so the chamber is dedicated to deposition of Topological and related materials using a combination of the elements listed below in the short-term.
‘R Chamber’ main UHV chamber (TI-MBE)
Thermal Effusion cells Al, Bi, In, Mn, Ni
Electron Beam cell Mo
Valved cracker cells Sb, Te
‘S Chamber’: secondary chamber (UHV-MBE)
Four pocket Electron Beam source Au, Pd, Nb, Ti
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Turn around time is generally from one week, although this could be faster or slower depending on the work package; please contact us for more details.
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