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Instrument or Capability | Mode (User/Service) | Capabilities | Parent Facility |
|---|---|---|---|
Service | Provides services for the fabrication of devices by electron beam lithography, patterning silicon wafers with feature sizes ranging from hundreds of micrometers down to 8nm. | ||
Service | A photolithography room with manual spin coaters and manual mask aligners for chips and up to 3ƒ?ü wafers, utilising a range of resists and manual development processes. | ||
Service | Dedicated laminar flow wet benches for work with solvents and acids. Wet etching and cleaning of samples, ranging in size from chips upto 4ƒ?ü wafers. This includes using hydrofluoric acid (HF) and piranha for etching/cleaning. | ||
Service | We have a small suite of dry etch tools for both reactive ion etching (RIE) and inductively coupled plasma (ICP) etching. These tools have a range of process gases, with dedicated tools for Chlorine-based etching of III-V semiconductors and Fluorine-based etching of dielectrics. | ||
Service | A small suite of thermal and e-beam evaporators, for the depositions of single films or multilayer stacks. Typically the available metals are grouped into ohmic material or gates material (see below). The evaporators can accommodate chips upto 4ƒ?ü wafers with a range of uniformity (see below). | ||
Service | Including plasma-enhanced chemical vapor deposition (PECVD) of silicon nitride (SiNx) and silicon oxide (SiOx), thermal atomic layer deposition (ALD) and e-beam evaporation of AlOx. | ||
Service | Surface profiling (stylus; AFM dektak); Dielectric thin film characterisation (ellipsometry); optical microscopy and probe stations; | ||
Service | Wafer cleaving and sawing, as well as basic device packaging | ||
Service | E-beam writer capable of patterning substrates of up to 200mm diameter with a resolution as high as 10nm to produce samples for a wide variety of academic and industrial users. | ||
Service | One of the fastest Gaussian Beam systems on the market, with a fast, arbitrary shape pattern generator of 100MHz. | ||
Service | III-V (Arsinides) work is undertaken on our Veeco GEN III and Veeco modGEN II growth chambers on up to 3ƒ? substrates; the GEN III is UHV connected to a dedicated Veeco 620 system which allows for in-situ atomic hydrogen surface cleaning/preparation and secondary ion mass spectrometry (SIMS) characterisation. | ||
Service | The Topological Materials chamber is a PREVAC MBE dual chamber design, funded by the Royce Institute, that supports growth on up to 2ƒ? substrates. The main chamber allows epitaxial growth of Topological and related materials and is UHV connected to a secondary chamber that currently allows deposition of a range of metals. | ||
User and Service | Large UHV scattering instrument, aimed at performing surface dynamics experiments (diffusion, phonon dynamics, dissipation, etc.). | ||
User and Service | First generation helium microscope. Typically used for ongoing high-resolution imaging. | ||
User and Service | Second generation advanced helium microscope, used for technique development and imaging. | ||
User and Service | Small UHV vacuum system aimed at performing structural HAS measurements using diffraction and diffuse scattering, and for preparatory work prior to Spin-Echo experiments. | ||
User and Service | The Cambridge Atom Scattering and Atom Microscopy Facility enables users to perform structure and dynamics measurements in the active field of 2D materials and surfaces, using ultra-delicate helium atom scattering methods. | ||
Service | The Nanofabrication Growth Facility features three Molecular Beam Epitaxial (MBE) Growth systems, operated in a cleanroom environment, covering a wide range of material systems. | ||
User and Service | A focused ion beam (FIB) scanning electron microscope equipped with EDS and EBSD. | ||
User and Service | The SU8600 utilises an ultra-stable cold field emission source to enable low-energy imaging for fine structure analysis as well as high-resolution imaging. | ||
User and Service | The Hitachi 5500 utilises an ultra-stable cold field emission source and an In-lens optic system for ultra-high resolution sub nanometre SE and low kV STEM imaging. | ||
