Plan Your Visit
Plan Your Visit CORDE is located on the West Cambridge Site, with excellent transport links and easy access to central Cambridge. Please see the resources below to help plan your visit. Our address is: CORDE – Cavendish Laboratory Ray Dolby CentreJJ Thomson AvenueCambridge CB3 0HE To reach us on the day, please contact […]
III-V Growth
III-V Growth Brief description Our Growth Facility houses two III-V MBE growth systems (‘W’ and ‘V’ Chambers) with identical configurations and in-situ monitoring capabilities capable of a growth temperature range between 0°C to 1000°C and group III materials/dopants. Many of the device structures grown by the group (over 10,000 to date) have been replicated in […]
Topological Materials Growth
Topological Materials Growth Brief description The Topological Materials dual chamber MBE has been designed for epitaxial growth of thin films of emerging classes of materials; topological (Bi-Sb-Te family); Weyl semi-metals (MoTe2); ferromagnetic; and antiferromagnetic (Mn alloys). Jump to booking Topological Materials Growth Brief description The Topological Materials dual chamber MBE has been designed for epitaxial […]
Electron Ion Beam Microscopy
Electron & Ion Beam Microscopy Our Electron and Ion Microscopy facility enables users to undertake scanning electron microscopy imaging and chemical analysis and focused ion beam nanofabrication and engineering and sample preparation. Key features Low kV high resolution imaging TEM sample preparation FIB slice and view Large area mapping Nano patterning and nanoengineering Enquire Now […]
XPS
XPS Our x-ray photoelectron spectrometer (XPS) facility is ideal for material analysis under variable environmental conditions. Key features: CORDE offers three XPS instruments with a wide range of capabilities and fast throughput of standard XPS measurements We can tailor experiments for specific requirements and provide professional support with high quality data acquisition and analysis Can […]
Leica VB6 UHR
Leica VB6 UHR Leica VB6 UHR Brief description The Leica VB6 UHR electron beam lithography machine is used for nanoscale patterning of semiconductor structures. This state-of-the-art system uses an electron beam of diameter 4nm and energy up to 100kV. It is capable of patterning substrates of up to 200mm diameter with a resolution as high […]
RAITH – EBPG 5200
RAITH – EBPG 5200 Brief description An Electron-beam Lithography system with a thermal field emission gun for operation at 100 kV, and a high KV for high aspect ratio nanostructures, including high speed direct write with full automatization. It has one of the fastest Gaussian Beam system on the market, with fast, arbitrary shape pattern […]
Growth
Growth The Nanofabrication Growth Facility features three Molecular Beam Epitaxial (MBE) Growth systems, operated in a cleanroom environment, covering a wide range of material systems. Key features: Growth of a wide range of material systems, which are subdivided into two main groupings: III-V (Arsenides) & Topological Materials. Dedicated characterisation and measurement systems including Normaski optical […]
Electron-beam Lithography
Electron-beam Lithography Provides services for the fabrication of devices by electron beam lithography, patterning silicon wafers with feature sizes ranging from hundreds of micrometers down to 8nm. Key features: Two electron beam lithography machines, essential manufacturing tools for fabrication of deep nanoscale devices. Contributes to developing novel nanoelectronic devices, on-chip integrated optoelectronic circuits, quantum devices, […]
Core Nanofabrication
Core Nanofabrication The Core Nanofabrication cleanrooms provide the ideal environment to produce high-quality devices. With an extensive range of equipment, they can support activities with a broad variety of materials including compound semiconductors, silicon, diamond and organic semiconductor materials from chips to small batches of wafers. The cleanrooms offer a full range of routine fabrication […]
